NEW DELHI: The Defence Research and Development Organisation (DRDO) has successfully demonstrated and implemented indigenous Gallium Nitride (GaN)-based technology for high-frequency defence systems, paving the way for advanced applications in next-generation radars, electronic warfare and other strategic systems, according to the Ministry of Defence’s annual report for 2025-26.
The technology covers advanced components capable of generating, amplifying, receiving and controlling high-frequency signals, with applications spanning radar, electronic warfare, communications, intelligence, surveillance and reconnaissance (ISR), and unmanned systems.
According to the ministry report, a single indigenous GaN chip measuring 3.5 mm by 3 mm can deliver up to 30 watts of power and operate at speeds up to 300 times faster than silicon. Indigenous GaN Nitride Monolithic Microwave Integrated Circuit (MMIC) technology for applications up to the X-band has been successfully demonstrated and implemented, while S-band GaN High Electron-Mobility Transistor (HEMT) power bars, power amplifiers, low-noise amplifiers and switch MMICs have also been designed, fabricated and demonstrated.
GaN is a semiconductor material suited to high-frequency and high-power applications and is particularly important for systems such as radar transmitters and electronic warfare jammers, where compact components capable of handling high power and frequencies are essential.
The latest development builds on work by DRDO’s Solid State Physics Laboratory (SSPL), which has developed indigenous processes for growing and manufacturing four-inch silicon carbide (SiC) wafers and fabricating GaN HEMTs with power levels of up to 150 watts and MMICs up to 40 watts for applications extending to X-band frequencies.
The Ministry of Defence has previously highlighted GaN-on-SiC technology for its potential to improve efficiency while reducing the size and weight of systems and enhancing overall performance. Such technology is considered important for future combat platforms, radars, electronic warfare systems and secure communications.
Limited production capability for indigenous GaN-on-SiC-based MMICs has also been established at GAETEC, Hyderabad, with multifunctional MMICs being developed for strategic systems, space and aerospace applications, as well as 5G and satellite communications.
The ministry has described the development of commercially viable SiC- and GaN-based MMIC technology as a major milestone in India’s efforts towards self-reliance in advanced semiconductor technologies for defence applications.
The latest disclosure comes amid wider efforts under the Innovations for Defence Excellence (iDEX) initiative to build domestic capabilities in GaN technology. Under the programme, the Ministry of Defence signed a contract with Agnit Semiconductors Private Limited for the design and development of advanced GaN semiconductors for next-generation wireless transmitters used in defence applications ranging from radars to electronic warfare jammers.
The ministry had earlier noted that most GaN components were imported, while the technology remained sensitive and cutting-edge, with exports controlled or restricted by several countries. The iDEX initiative seeks to develop and manufacture such components domestically, strengthening indigenous design and production capabilities and creating potential opportunities for defence exports.
The contract with Agnit Semiconductors was signed in New Delhi on December 1, 2023, by then Additional Secretary (Defence Industries Production) and CEO, Defence Innovation Organisation, T Natarajan, in the presence of former Defence Secretary Giridhar Aramane and senior civil and military officials.
The indigenous development of GaN and SiC technologies is expected to strengthen India’s technological base in high-end defence electronics and reduce dependence on imported components in critical strategic systems.
